DC broken down MOSFET model for circuit reliability simulationFERNANDEZ, R; RODRIGUEZ, R; NAFRIA, M et al.Electronics Letters. 2005, Vol 41, Num 6, pp 368-370, issn 0013-5194, 3 p.Article

Contributions of the gate current and channel current variation to the post-breakdown MOSFET performanceFERNANDEZ, R; RODRIGUEZ, R; NAFRIA, M et al.Microelectronic engineering. 2008, Vol 85, Num 2, pp 259-262, issn 0167-9317, 4 p.Article

Charge trapping and degradation of HfO₂/SiO₂ MOS gate stacks observed with enhanced CAFMAGUILERA, L; PORTI, M; NAFRIA, M et al.IEEE electron device letters. 2006, Vol 27, Num 3, pp 157-159, issn 0741-3106, 3 p.Article

New insights on the Post-BD conduction of MOS devices at the nanoscalePORTI, M; MELI, S; NAFRIA, M et al.IEEE electron device letters. 2005, Vol 26, Num 2, pp 109-111, issn 0741-3106, 3 p.Article

Breakdown on thin gate silicon dioxide films : A reviewNAFRIA, M; SUNE, J; AYMERICH, X et al.Microelectronics and reliability. 1996, Vol 36, Num 7-8, pp 871-905, issn 0026-2714Article

Exploratory observations of post-breakdown conduction in polycrystalline-silicon and metal-gated thin-oxide metal-oxide-semiconductor capacitorsNAFRIA, M; SUNE, J; AYMERICH, X et al.Journal of applied physics. 1993, Vol 73, Num 1, pp 205-215, issn 0021-8979Article

Characterization of SiO₂ dielectric breakdown for reliability simulationNAFRIA, M; SUNE, J; AYMERICH, X et al.I.E.E.E. transactions on electron devices. 1993, Vol 40, Num 9, pp 1662-1668, issn 0018-9383Article

Grain boundary-driven leakage path formation in HfO2 dielectricsBERSUKER, G; YUM, J; KITSCH, P et al.Solid-state electronics. 2011, Vol 65-66, pp 146-150, issn 0038-1101, 5 p.Conference Paper

Trapped charge and stress induced leakage current (SILC) in tunnel SiO₂ layers of de-processed MOS non-volatile memory devices observed at the nanoscaleLANZA, M; PORTI, M; NAFRIA, M et al.Microelectronics and reliability. 2009, Vol 49, Num 9-11, pp 1188-1191, issn 0026-2714, 4 p.Conference Paper

Analysis of the degradation of HfO₂/SiO₂ gate stacks using nanoscale and device level techniquesAGUILERA, L; AMAT, E; RODRIGUEZ, R et al.Microelectronic engineering. 2007, Vol 84, Num 5-8, pp 1618-1621, issn 0167-9317, 4 p.Conference Paper

Performance and reliability of ultra-thin oxide nMOSFETs under variable body biasCRUPI, F; MAGNELLI, L; FALBO, P et al.Microelectronic engineering. 2007, Vol 84, Num 9-10, pp 1947-1950, issn 0167-9317, 4 p.Conference Paper

Irradiation induced weak spots in SiO₂ gate oxides of MOS devices observed with C-AFMPORTI, M; NAFRIA, M; AYMERICH, X et al.Electronics Letters. 2005, Vol 41, Num 2, pp 101-103, issn 0013-5194, 3 p.Article

Feasibility of the electrical characterization of single SiO₂ breakdown spots using C-AFMPORTI, M; RODRIGUEZ, R; NAFRIA, M et al.Journal of non-crystalline solids. 2001, Vol 280, Num 1-3, pp 138-142, issn 0022-3093Conference Paper

Two-step stress method for the dynamic testing of very thin (8 nm) SiO₂ filmsRODRIGUEZ, R; MIRANDA, E; NAFRIA, M et al.Microelectronics and reliability. 1998, Vol 38, Num 6-8, pp 1127-1131, issn 0026-2714Conference Paper

CHC degradation of strained devices based on SiON and high-k gate dielectric materialsAMAT, E; RODRIGUEZ, R; GONZALEZ, M. B et al.Microelectronic engineering. 2011, Vol 88, Num 7, pp 1408-1411, issn 0167-9317, 4 p.Conference Paper

Channel hot-carrier degradation under AC stress in short channel nMOS devices with high-k gate stacksAMAT, E; RODRIGUEZ, R; NAFRIA, M et al.Microelectronic engineering. 2009, Vol 86, Num 7-9, pp 1908-1910, issn 0167-9317, 3 p.Conference Paper

Crystallization and silicon diffusion nanoscale effects on the electrical properties of Al₂O₃ based devicesLANZA, M; PORTI, M; MICHALOWSKI, P et al.Microelectronic engineering. 2009, Vol 86, Num 7-9, pp 1921-1924, issn 0167-9317, 4 p.Conference Paper

Reversible dielectric breakdown in ultrathin Hf based high-k stacks under current-limited stressesCRESPO-YEPES, A; MARTIN-MARTINEZ, J; RODRIGUEZ, R et al.Microelectronics and reliability. 2009, Vol 49, Num 9-11, pp 1024-1028, issn 0026-2714, 5 p.Conference Paper

Influence of the SiO₂ layer thickness on the degradation of HfO₂/SiO₂ stacks subjected to static and dynamic stress conditionsAMAT, E; RODRIGUEZ, R; NAFRIA, M et al.Microelectronics and reliability. 2007, Vol 47, Num 4-5, pp 544-547, issn 0026-2714, 4 p.Conference Paper

Effect of oxide breakdown on RS latchesFERNANDEZ, R; RODRIGUEZ, R; NAFRIA, M et al.Microelectronics and reliability. 2007, Vol 47, Num 4-5, pp 581-584, issn 0026-2714, 4 p.Conference Paper

Worn-out oxide MOSFET characteristics: Role of gate current and device parameters on a current mirrorMARTIN-MARTINEZ, J; RODRIGUEZ, R; NAFRIA, M et al.Microelectronics and reliability. 2007, Vol 47, Num 4-5, pp 665-668, issn 0026-2714, 4 p.Conference Paper

Influence of the manufacturing process on the electrical properties of thin (<4 nm) Hafnium based high-k stacks observed with CAFMLANZA, M; PORTI, M; NAFRIA, M et al.Microelectronics and reliability. 2007, Vol 47, Num 9-11, pp 1424-1428, issn 0026-2714, 5 p.Conference Paper

Ring oscillator behavior after oxide breakdownFERNANDEZ, R; RODRIGUEZ, R; NAFRIA, M et al.Proceedings of SPIE - the International Society for Optical Engineering. 2005, isbn 0-8194-5832-5, 2Vol, vol1, 374-379Conference Paper

A new approach to the modeling of oxide breakdown on CMOS circuitsFERNANDEZ, R; RODRIGUEZ, R; NAFRIA, M et al.Microelectronics and reliability. 2004, Vol 44, Num 9-11, pp 1519-1522, issn 0026-2714, 4 p.Conference Paper

Atomic force microscope topographical artifacts after the dielectric breakdown of ultrathin SiO₂ filmsPORTI, M; NAFRIA, M; BLÜM, M. C et al.Surface science. 2003, Vol 532-35, pp 727-731, issn 0039-6028, 5 p.Conference Paper